ABB 5SHX2645L0001 3BHL000389P0101 IGCT MODULE

ABB 5SHX2645L0001 3BHL000389P0101 IGCT MODULE

IGCT (Integrated Gate-Commutated Thyristor) is a high-performance, high-voltage, high-power power electronic device that combines the characteristics of a GTO (Gate-Switchable Thyristor and a MOSFET) and a MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor).

Characteristic

Low switching losses: IGCT can operate at up to 4 times the operating frequency of traditional power devices, making it suitable for high-frequency applications

Simplified auxiliary circuitry: IGCT can operate without snubber circuitry, reducing the number of components and improving the reliability and efficiency of the system

Low gate drive power: IGCT has a low gate drive power, which reduces energy consumption

High reliability: IGCT has high temperature stability and good reverse blocking ability, which is suitable for high-voltage and high-power applications

Application scenarios

IGCT is widely used in high-voltage DC transmission, motor drive and other fields. Due to its low switching losses and good short-circuit capability, IGCT performs well in applications that require high-power handling.